絲印：AN60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

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RECTRON

麗正國(guó)際

絲?。?strong>AN60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DFV uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

文件：224.17 Kbytes 頁(yè)數(shù)：6 Pages

RECTRON

麗正國(guó)際

60 GHz radar system platform

The BGT60TR13C shield is optimized for fast prototyping designs and system integrations as well as initial product feature evaluations. The board offers developers the flexibility to choose their own platform depending on their preferred use cases. The sensor supports various use cases, serving a

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INFINEON

英飛凌

Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments

Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. Hi

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VISHAYVishay Siliconix

威世威世科技公司

Driver ICs for Automotive Diagnostic Communications Meet ISO 9141 Standards

A series of compact, single-ended bus drivers for automotive diagnostic applications enables communication over the relatively long distances between testing equipment and automotive electronic control units, while protecting sensitive logic devices from the hazards of the automotive environment.

文件：49.86 Kbytes 頁(yè)數(shù)：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit

INTRODUCTION Power MOSFETs have become the standard choice as the main switching device for low-voltage ( There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental basis of the device structure before the MOSFET behavior can be explained. Th

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VISHAYVishay Siliconix

威世威世科技公司

Current-Sensing Power MOSFETs

INTRODUCTION Vishay Siliconix current-sensing power MOSFETs offer a simple means of incorporating a protection feature into an electronic control circuit and avoiding catastrophic failures resulting from overcurrent (overload) and/or short-circuit conditions. The device package is a modified D2

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VISHAYVishay Siliconix

威世威世科技公司

24 GHz Radar

Scope and purpose This application note provides an in-depth overview of Infineon’s highly integrated multichannel 24 GHz radar transceiver chip, BGT24LTR22. It includes the following: Detailed functional description of all the circuit blocks Overview of MMIC evaluation board and RF impedan

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INFINEON

英飛凌

Wide bandwidth video amplifier IC inverting amplifier

■Overview The AN607P is an amplifier IC with a 20 dB gain, a phase inverted output and a wide bandwidth (10 MHz). It is best suited to video amplifier and sense amplifier. ■Features ?Wide bandwidth (10 MHz) ?20 dB, phase inverting amplifier ?4-pin SIP plastic package ■App

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PANASONIC

松下

Wide bandwidth video amplifier IC in-phase amplifier

■ Overview The AN608P is an amplifier IC with a 20 dB gain, a non-inverted output and a wide bandwidth (10MHz). It is best suited to video amplifier and sense amplifier. ■ Features ? Wide bandwidth (10 MHz) ? 20 dB non-inverting amplifier ? 4-pin SIP plastic package ■ Applications ? Video a

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PANASONIC

松下