絲?。?strong>100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60AT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：346 Kbytes 頁數(shù)：7 Pages

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絲?。?strong>100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60BT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：1.44149 Mbytes 頁數(shù)：6 Pages

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絲?。?strong>100N60；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60HD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：493.23 Kbytes 頁數(shù)：7 Pages

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絲印：100N60；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60T7 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

文件：474.17 Kbytes 頁數(shù)：7 Pages

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絲?。?strong>100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：239.2 Kbytes 頁數(shù)：7 Pages

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