N-channel junction FETs Rev. 4 ??20 September 2011

General description Symmetrical N-channel junction FETs in a SOT23 package. Features and benefits ■ High-speed switching ■ Interchangeability of drain and source connections ■ Low RDSon at zero gate voltage ( Applications ■ Analog switches ■ Choppers ■ Commutators ■ Multiplexers ■ Thin

文件：87.77 Kbytes 頁數(shù)：9 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES ? High-speed switching ? Interchangeability of drain and source connections

文件：36.52 Kbytes 頁數(shù)：6 Pages

PHI

PHI

N-channel junction FETs Rev. 4 ??20 September 2011

General description Symmetrical N-channel junction FETs in a SOT23 package. Features and benefits ■ High-speed switching ■ Interchangeability of drain and source connections ■ Low RDSon at zero gate voltage ( Applications ■ Analog switches ■ Choppers ■ Commutators ■ Multiplexers ■ Thin

文件：87.77 Kbytes 頁數(shù)：9 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

文件：34.27 Kbytes 頁數(shù)：6 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

文件：34.27 Kbytes 頁數(shù)：6 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

文件：34.27 Kbytes 頁數(shù)：6 Pages

PHI

PHI