N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES ? High-speed switching ? Interchangeability of drain and source connections

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N-channel junction FETs Rev. 4 ??20 September 2011

General description Symmetrical N-channel junction FETs in a SOT23 package. Features and benefits ■ High-speed switching ■ Interchangeability of drain and source connections ■ Low RDSon at zero gate voltage ( Applications ■ Analog switches ■ Choppers ■ Commutators ■ Multiplexers ■ Thin

文件：87.77 Kbytes 頁數(shù)：9 Pages

恩XP

N溝道FET

對稱N溝道結(jié)型場效應(yīng)晶體管，采用SOT23封裝。 高速開關(guān)\n 可互換漏極和源極連接\n 低導(dǎo)通電阻;

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