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    首頁(yè) >PMB>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    PMBF4392

    N-channel FETs

    DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry.

    文件:40.84 Kbytes 頁(yè)數(shù):7 Pages

    PHI

    PHI

    PHI

    PMBF4393

    N-channel FETs

    DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry.

    文件:40.84 Kbytes 頁(yè)數(shù):7 Pages

    PHI

    PHI

    PHI

    PMBF4393

    RF Manual 16th edition

    General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

    文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

    恩XP

    恩XP

    PMBF4416

    N-channel field-effect transistor

    DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES ? Low noise ? Interchangeability of drain and source connections ? High gain.

    文件:95.15 Kbytes 頁(yè)數(shù):9 Pages

    PHI

    PHI

    PHI

    PMBF4416A

    N-channel field-effect transistor

    DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES ? Low noise ? Interchangeability of drain and source connections ? High gain.

    文件:95.15 Kbytes 頁(yè)數(shù):9 Pages

    PHI

    PHI

    PHI

    PMBF5484

    N-channel field-effect transistors

    DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES ? Low noise ? Interchangeability of drain and source connections ? High gain.

    文件:96 Kbytes 頁(yè)數(shù):10 Pages

    PHI

    PHI

    PHI

    PMBF5485

    N-channel field-effect transistors

    DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES ? Low noise ? Interchangeability of drain and source connections ? High gain.

    文件:96 Kbytes 頁(yè)數(shù):10 Pages

    PHI

    PHI

    PHI

    PMBF5486

    N-channel field-effect transistors

    DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES ? Low noise ? Interchangeability of drain and source connections ? High gain.

    文件:96 Kbytes 頁(yè)數(shù):10 Pages

    PHI

    PHI

    PHI

    PMBFJ108

    N-channel junction FETs

    DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. FEATURES ? High-speed switching ? Interchangeability of drain and source connections ? Low RDSon at zero gate voltag

    文件:36.29 Kbytes 頁(yè)數(shù):6 Pages

    PHI

    PHI

    PHI

    PMBFJ108

    RF Manual 16th edition

    General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

    文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

    恩XP

    恩XP

    晶體管資料

    • 型號(hào):

      PMBTA12

    • 別名:

      三極管、晶體管、晶體三極管

    • 生產(chǎn)廠家:

    • 制作材料:

      Si-N+Darl

    • 性質(zhì):

      表面帖裝型 (SMD)

    • 封裝形式:

      貼片封裝

    • 極限工作電壓:

      20V

    • 最大電流允許值:

      0.5A

    • 最大工作頻率:

      <1MHZ或未知

    • 引腳數(shù):

      3

    • 可代換的型號(hào):

      MMBTA12,

    • 最大耗散功率:

      0.625W

    • 放大倍數(shù):

    • 圖片代號(hào):

      H-15

    • vtest:

      20

    • htest:

      999900

    • atest:

      0.5

    • wtest:

      0.625

    技術(shù)參數(shù)

    • Readability:

      0.01g / 0.05%

    • Repeatability:

      0.02g

    • Linearity:

      0.02g

    • Pan size:

      3.9\ / 100mm ?

    • Weighing Units:

      %M

    • Stabilisation Time:

      3

    • Interface:

      RS-232/USB

    • Calibration:

      External calibration

    • Display:

      Backlit LCD with 0.9\ / 24mm high digits

    • Power Supply:

      Power cord

    • MSDS Sheet:

      Open MSDS sheet

    • Operating Temperature:

      0° to 40°C / 32° to 104°F

    • Construction:

      Die-cast aluminum

    • Net Weight:

      6.1kg

    • Overall dims:

      9.8\x14.2\x7.3\ / 250x360x185mm

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    24+
    3000
    公司存貨
    詢價(jià)
    INFINEON
    04+/05+
    VQFN40
    506
    全新原裝100真實(shí)現(xiàn)貨供應(yīng)
    詢價(jià)
    Phoenix/菲尼克斯
    23/24+
    1004364
    2646
    優(yōu)勢(shì)特價(jià) 原裝正品 全產(chǎn)品線技術(shù)支持
    詢價(jià)
    INF
    02+
    SOP28
    2760
    全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
    詢價(jià)
    INFINEON
    23+
    TSSOP/38
    7000
    絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
    詢價(jià)
    PHI
    25+
    SOT23
    130
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
    詢價(jià)
    恩XP
    17+
    SOT23
    6200
    100%原裝正品現(xiàn)貨
    詢價(jià)
    INFINEON
    16+
    SOT23
    8000
    原裝現(xiàn)貨請(qǐng)來(lái)電咨詢
    詢價(jià)
    SIEMENS
    24+
    MQFP144
    5989
    公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
    詢價(jià)
    INFINEON
    2016+
    QFN
    6000
    只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
    詢價(jià)
    更多PMB供應(yīng)商 更新時(shí)間2026-1-22 16:01:00

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