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    首頁(yè) >PMB>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    PMBFJ109

    N-channel junction FETs

    DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. FEATURES ? High-speed switching ? Interchangeability of drain and source connections ? Low RDSon at zero gate voltag

    文件:36.29 Kbytes 頁(yè)數(shù):6 Pages

    PHI

    PHI

    PHI

    PMBFJ109

    RF Manual 16th edition

    General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

    文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

    恩XP

    恩XP

    PMBFJ110

    RF Manual 16th edition

    General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

    文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

    恩XP

    恩XP

    PMBFJ110

    N-channel junction FETs

    DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. FEATURES ? High-speed switching ? Interchangeability of drain and source connections ? Low RDSon at zero gate voltag

    文件:36.29 Kbytes 頁(yè)數(shù):6 Pages

    PHI

    PHI

    PHI

    PMBFJ111

    RF Manual 16th edition

    General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

    文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

    恩XP

    恩XP

    PMBFJ111

    N-channel junction FETs Rev. 4 ??20 September 2011

    General description Symmetrical N-channel junction FETs in a SOT23 package. Features and benefits ■ High-speed switching ■ Interchangeability of drain and source connections ■ Low RDSon at zero gate voltage ( Applications ■ Analog switches ■ Choppers ■ Commutators ■ Multiplexers ■ Thin

    文件:87.77 Kbytes 頁(yè)數(shù):9 Pages

    恩XP

    恩XP

    PMBFJ111

    N-channel junction FETs

    DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES ? High-speed switching ? Interchangeability of drain and source connections

    文件:36.52 Kbytes 頁(yè)數(shù):6 Pages

    PHI

    PHI

    PHI

    PMBFJ112

    RF Manual 16th edition

    General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

    文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

    恩XP

    恩XP

    PMBFJ112

    N-channel junction FETs Rev. 4 ??20 September 2011

    General description Symmetrical N-channel junction FETs in a SOT23 package. Features and benefits ■ High-speed switching ■ Interchangeability of drain and source connections ■ Low RDSon at zero gate voltage ( Applications ■ Analog switches ■ Choppers ■ Commutators ■ Multiplexers ■ Thin

    文件:87.77 Kbytes 頁(yè)數(shù):9 Pages

    恩XP

    恩XP

    PMBFJ112

    N-channel junction FETs

    DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES ? High-speed switching ? Interchangeability of drain and source connections

    文件:36.52 Kbytes 頁(yè)數(shù):6 Pages

    PHI

    PHI

    PHI

    晶體管資料

    • 型號(hào):

      PMBTA12

    • 別名:

      三極管、晶體管、晶體三極管

    • 生產(chǎn)廠家:

    • 制作材料:

      Si-N+Darl

    • 性質(zhì):

      表面帖裝型 (SMD)

    • 封裝形式:

      貼片封裝

    • 極限工作電壓:

      20V

    • 最大電流允許值:

      0.5A

    • 最大工作頻率:

      <1MHZ或未知

    • 引腳數(shù):

      3

    • 可代換的型號(hào):

      MMBTA12,

    • 最大耗散功率:

      0.625W

    • 放大倍數(shù):

    • 圖片代號(hào):

      H-15

    • vtest:

      20

    • htest:

      999900

    • atest:

      0.5

    • wtest:

      0.625

    技術(shù)參數(shù)

    • Readability:

      0.01g / 0.05%

    • Repeatability:

      0.02g

    • Linearity:

      0.02g

    • Pan size:

      3.9\ / 100mm ?

    • Weighing Units:

      %M

    • Stabilisation Time:

      3

    • Interface:

      RS-232/USB

    • Calibration:

      External calibration

    • Display:

      Backlit LCD with 0.9\ / 24mm high digits

    • Power Supply:

      Power cord

    • MSDS Sheet:

      Open MSDS sheet

    • Operating Temperature:

      0° to 40°C / 32° to 104°F

    • Construction:

      Die-cast aluminum

    • Net Weight:

      6.1kg

    • Overall dims:

      9.8\x14.2\x7.3\ / 250x360x185mm

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    24+
    3000
    公司存貨
    詢價(jià)
    INFINEON
    04+/05+
    VQFN40
    506
    全新原裝100真實(shí)現(xiàn)貨供應(yīng)
    詢價(jià)
    Phoenix/菲尼克斯
    23/24+
    1004364
    2646
    優(yōu)勢(shì)特價(jià) 原裝正品 全產(chǎn)品線技術(shù)支持
    詢價(jià)
    恩XP
    23+
    SOT23
    3000
    原裝正品假一罰百!可開增票!
    詢價(jià)
    Nexperia
    ROHS/NEW.
    原封ORIGIANL
    30050
    原裝,元器件供應(yīng)/半導(dǎo)體
    詢價(jià)
    NEXPERIA/安世
    20+
    SOT-23-3
    1000
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    21+
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    120000
    全新原裝
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    25+
    QFP
    576
    旗艦店
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    恩XP
    新年份
    SOT-363
    3000
    原裝正品大量現(xiàn)貨,要多可發(fā)貨,實(shí)單帶接受價(jià)來(lái)談!
    詢價(jià)
    INFINEON/英飛凌
    25+
    TSSOP
    9000
    就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
    詢價(jià)
    更多PMB供應(yīng)商 更新時(shí)間2026-1-22 16:01:00

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