N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES ? Low noise ? Interchangeability of drain and source connections ? High gain.

文件：95.15 Kbytes 頁數(shù)：9 Pages

PHI

PHI

N-channel field-effect transistor

恩XP

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES ? Low noise ? Interchangeability of drain and source connections ? High gain.

文件：95.15 Kbytes 頁數(shù)：9 Pages

PHI

PHI

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES ? Low noise ? Interchangeability of drain and source connections ? High gain.

文件：95.61 Kbytes 頁數(shù)：9 Pages

PHI

PHI

SFET RF,VHF, UHF, Amplitiers

N-Channel RF Amplifier ? This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. ? Sourced from process 50.

文件：196.11 Kbytes 頁數(shù)：2 Pages

FAIRCHILD

仙童半導體

N-Channel JFET High Frequency Amplifier

FEATURES ? Low Noise ? Low Feedback Capacitance ? Low Output Capacitance ? High Transconductance ? High Power Gain

文件：23.71 Kbytes 頁數(shù)：2 Pages

CALOGIC