TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

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PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 45A@ TC=25℃ Drain Source Voltage -VDSS= 30V(Min) Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.19 Kbytes 頁數(shù)：2 Pages

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TrenchMOS transistor Standard level FET

恩XP

30V N-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@10V,ID@10A

文件：450.85 Kbytes 頁數(shù)：8 Pages

PANJIT

強(qiáng)茂

45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

Description These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili zation of silicon, resulting in outstanding performance. They were designed for use in applications such as switchi

文件：100.17 Kbytes 頁數(shù)：7 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.11 Kbytes 頁數(shù)：2 Pages

ISC

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