N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Very low on-state resistance ? Fast switching ? High thermal cycling performance ? Low thermal resistance ? Logic level

文件：108.76 Kbytes 頁數(shù)：11 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.69 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET? power MOSFET ? Package with low thermal resistance ? 100 Rg and UIS tested

文件：1.13625 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：59.48 Kbytes 頁數(shù)：7 Pages

PHI

PHI

N-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET? power MOSFET ? Package with low thermal resistance ? 100 Rg and UIS tested

文件：1.13521 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

30V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：227.71 Kbytes 頁數(shù)：6 Pages

PANJIT

強(qiáng)茂