PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

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PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.89 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

PowerMOS transistor

恩XP

StarMOST Power MOSFET

文件：203.16 Kbytes 頁數(shù)：2 Pages

GOOD-ARK

固锝電子

N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR

N - CHANNEL 200V - 0.7? - 5A - TO-251/TO-252 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.7 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED C

文件：105.09 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 200V - 0.6W - 5A DPAK MESH OVERLAY??MOSFET

文件：257.29 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體