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                >PHP1N60E>規(guī)格書(shū)列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          PHP1N60E
          PowerMOS transistor
          
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies
          文件：21.11 Kbytes 頁(yè)數(shù)：4 Pages
          PHI
          PHI
          PHI
          

          PHP1N60E
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current -ID= 2A@ TC=25℃
·Drain Source Voltage -VDSS= 600V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 6Ω(Max)@VGS= 10V
DESCRIPTION
·DC-to-DC Converter
·General Industrial Applications
·Power Motor Control
          文件：372.02 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          PHP1N60E
          PowerMOS transistor
          GENERAL DESCRIPTION\nN-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies ( 
          恩XP
          恩XP
          

          PHT1N60R
          PowerMOS transistor
          
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights
          文件：30.34 Kbytes 頁(yè)數(shù)：5 Pages
          PHI
          PHI
          PHI
          

          PHX1N60E
          PowerMOS transistor Isolated version of PHP1N60E
          
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow
          文件：24.98 Kbytes 頁(yè)數(shù)：5 Pages
          PHI
          PHI
          PHI
          

          PHX1N60E
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current -ID= 1.3A@ TC=25℃
·Drain Source Voltage -VDSS= 600V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 6.0Ω(Max)@VGS= 10V
DESCRIPTION
·DC-to-DC Converter
·General Industrial Applications
·Power Motor Control
          文件：318.93 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          
            
          
		
          
            
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          更多PHP1N60E供應(yīng)商
            更新時(shí)間2026-1-19 14:56:00
        
          
        
          
          
          
            
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