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          首頁 >PHD>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHD37N06LT

          TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP37N06LT is sup

          文件:79.11 Kbytes 頁數(shù):10 Pages

          PHI

          PHI

          PHI

          PHD37N06LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 37A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 32mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:299.03 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHD38N02LT

          TrenchMOS logic level FET

          Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). Features ■ Low on-state resistance ■ 2.5 V gate drive. Applications ■ Linear regulator for

          文件:252.6 Kbytes 頁數(shù):13 Pages

          PHI

          PHI

          PHI

          PHD38N02LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:299.78 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHD38N02LT

          N-channel TrenchMOS logic level FET

          1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications n Linear regulator for Double-Data Rate (DDR) memory n Low on-state resistance n 2.5 V gate drive

          文件:206.38 Kbytes 頁數(shù):13 Pages

          NEXPERIA

          安世

          PHD3N20E

          PowerMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

          文件:56.81 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          PHD3N20E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:298.09 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHD3N20L

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:298.09 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHD3N20L

          PowerMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intend

          文件:56.85 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          PHD3N40E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:298.19 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • Package name:

            DPAK

          • Product status:

            Production

          • Channel type:

            N

          • Number of transistors:

            1

          • V_DS [max] (V):

            30

          • R_DSon [max] @ V_GS = 10 V (mΩ):

            5.5

          • R_DSon [max] @ V_GS = 5 V (mΩ):

            7.5

          • T_j [max] (°C):

            175

          • I_D [max] (A):

            75

          • Q_GD [typ] (nC):

            8

          • P_tot [max] (W):

            166

          • Q_r [typ] (nC):

            33

          • V_GSth [typ] (V):

            1.9

          • Automotive qualified:

            N

          • C_iss [typ] (pF):

            2180

          • C_oss [typ] (pF):

            600

          • Date:

            2011-01-05

          供應商型號品牌批號封裝庫存備注價格
          恩XP
          23+
          TO-252
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          WEEN
          25+
          TO-92-3
          6675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          恩XP
          16+
          NA
          8800
          誠信經(jīng)營
          詢價
          恩XP
          23+
          N/A
          6000
          公司只做原裝,可來電咨詢
          詢價
          2023+
          3000
          進口原裝現(xiàn)貨
          詢價
          恩XP
          20+
          SOT428TO-252
          36900
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          恩XP
          24+
          SOP
          90
          NXP一級代理商原裝進口現(xiàn)貨,假一賠十
          詢價
          JIDC濟德
          24+
          連接器
          5000
          濟德連接器/961-1411-003可替代PHDR-14VS
          詢價
          VBsemi/臺灣微碧
          25+
          SOT428(D
          30000
          代理全新原裝現(xiàn)貨 價格優(yōu)勢
          詢價
          恩XP
          20+
          SOT252
          11520
          特價全新原裝公司現(xiàn)貨
          詢價
          更多PHD供應商 更新時間2026-1-19 14:56:00
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