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          首頁 >PHD>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHD6N10E

          PowerMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

          文件:70.04 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          PHD6N10E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.54Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:298.59 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHD71NQ03LT

          N-channel TrenchMOS logic level FET

          1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Simp

          文件:775.19 Kbytes 頁數(shù):13 Pages

          NEXPERIA

          安世

          PHD71NQ03LT

          TrenchMOS logic level FET

          Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHP71NQ03LT in SOT78 (TO-220AB) PHB71NQ03LT in SOT404 (D2-PAK) PHD71NQ03LT in SOT428 (D-PAK). Features ■ Logic level compatible ■ Low gate cha

          文件:265.02 Kbytes 頁數(shù):14 Pages

          PHI

          PHI

          PHI

          PHD71NQ03LT

          N-channel TrenchMOS logic level FET

          General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Simple gate d

          文件:220.18 Kbytes 頁數(shù):13 Pages

          恩XP

          恩XP

          PHD71NQ03LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:298.76 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHD71NQ03LT

          N-channel Enhancement Mode Power MOSFET

          Features ? VDS= 30V, ID= 150A RDS(ON)

          文件:1.07702 Mbytes 頁數(shù):5 Pages

          BYCHIP

          百域芯

          PHD77NQ03LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:299.06 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHD77NQ03T

          N-channel TrenchMOS FET

          1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications n Fast switching n Low thermal resistance n DC-to-DC converters n Computer motherboard

          文件:222.01 Kbytes 頁數(shù):14 Pages

          NEXPERIA

          安世

          PHD78NQ03LT

          N-channel enhancement mode field-effect transistor

          Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS? technology. Product availability: PHP78NQ03LT in SOT78 (TO-220AB) PHB78NQ03LT in SOT404 (D2-PAK) PHD78NQ03LT in SOT428 (D-PAK). Features ■ Low on-state resistan

          文件:292.53 Kbytes 頁數(shù):14 Pages

          PHI

          PHI

          PHI

          技術參數(shù)

          • Package name:

            DPAK

          • Product status:

            Production

          • Channel type:

            N

          • Number of transistors:

            1

          • V_DS [max] (V):

            30

          • R_DSon [max] @ V_GS = 10 V (mΩ):

            5.5

          • R_DSon [max] @ V_GS = 5 V (mΩ):

            7.5

          • T_j [max] (°C):

            175

          • I_D [max] (A):

            75

          • Q_GD [typ] (nC):

            8

          • P_tot [max] (W):

            166

          • Q_r [typ] (nC):

            33

          • V_GSth [typ] (V):

            1.9

          • Automotive qualified:

            N

          • C_iss [typ] (pF):

            2180

          • C_oss [typ] (pF):

            600

          • Date:

            2011-01-05

          供應商型號品牌批號封裝庫存備注價格
          2023+
          3000
          進口原裝現(xiàn)貨
          詢價
          JSTSALESAMERICAINC
          22+
          Housing
          10000
          現(xiàn)貨,原廠原裝假一罰十!
          詢價
          PH
          24+
          原廠封裝
          65250
          支持樣品,原裝現(xiàn)貨,提供技術支持!
          詢價
          恩XP
          22+
          TO-252
          12500
          原裝正品支持實單
          詢價
          恩XP
          2008
          TO-252
          6521
          現(xiàn)貨庫存/價格優(yōu)惠熱賣
          詢價
          恩XP
          20+
          TO-252
          55000
          原裝正品力挺實單~支持美金交易和專票,深圳原廠現(xiàn)貨~
          詢價
          恩XP
          16+
          NA
          8800
          誠信經(jīng)營
          詢價
          恩XP
          20+
          SOT428TO-252
          36900
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          恩XP
          24+
          SOP
          90
          NXP一級代理商原裝進口現(xiàn)貨,假一賠十
          詢價
          VBsemi/臺灣微碧
          25+
          SOT428(D
          30000
          代理全新原裝現(xiàn)貨 價格優(yōu)勢
          詢價
          更多PHD供應商 更新時間2026-1-19 13:42:00
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