Complementary enhancement mode MOS transistor

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) plastic package. FEATURES ? Very low on-state resistance ? High-speed switching ? No secondary breakdown. APPLICATIONS ? Motor and actuator driver ? Power management ? Synchronized rectif

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PHI

PHI

Complementary enhancement mode MOS transistor

DESCRIPTION\nOne N-channel and one P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) plastic package.FEATURES\n? Very low on-state resistance\n? High-speed switching\n? No secondary breakdown.APPLICATIONS\n? Motor and actuator driver\n? Power management\n? Synchronized rectificatio ? Very low on-state resistance\n? High-speed switching\n? No secondary breakdown.;

恩XP

Class K-5

FEATURES/BENEFITS : ? Easy to read imprint label for quick recognition and replacement ? Low cost for high protection value

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MERSEN

美爾森

Time Delay/Class RK5

FEATURES/BENEFITS : ? Time-delay ? Current-limiting ? AC & DC rated ? Optional solid state SmartSpot blown fuse indicator ? Time-delay for motor start-ups and transformer inrush currents without nuisance opening ? Current-limiting for low peak let-thru current ? Rejection-style design prev

文件：285.84 Kbytes 頁(yè)數(shù)：2 Pages

MERSEN

美爾森

DFB/EA Laser Module for 2.5 Gb/s Applications

Description The laser module, intended for DWDM applications at OC-48/STM-16, consists of a DFB laser with integrated absorption modulator mounted in a high speed package including isolator. Laser wavelengths are available according to the ITU-T grid. Key Features ? 1550 nm DFB CW source monoli

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ERICSSON

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