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          首頁 >PD840>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          PD84010-E

          RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

          Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

          文件:376.43 Kbytes 頁數(shù):14 Pages

          STMICROELECTRONICS

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          PD84010S-E

          RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

          Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

          文件:376.43 Kbytes 頁數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD84010STR-E

          RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

          Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

          文件:376.43 Kbytes 頁數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD84010TR-E

          RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

          Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

          文件:376.43 Kbytes 頁數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD84006-E

          Excellent thermal stability

          文件:214.27 Kbytes 頁數(shù):11 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD84002

          RF Power LDMOS transistor

          ? In compliance with the 2002/95/EC european directive\n? Supplied in tape and reel\n? Excellent thermal stability\n? Broadband performances POUT = 2 W with 13 dB gain @ 870 MHz? Common source configuration\n? ESD protection\n? Plastic package;

          ST

          意法半導(dǎo)體

          PD84006-E

          RF Power LDMOS transistor

          The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and relia Excellent thermal stability\nCommon source configuration\nBroadband performances: POUT = 6 W with 13 dB gain @ 870 MHz\nPlastic package\nESD protection\nIn compliance with the 2002/95/EC European directive;

          ST

          意法半導(dǎo)體

          PD84006L-E

          RF Power LDMOS transistor

          The PD84006L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz.\n PD84006L-E’s superior gain and efficien ? Excellent thermal stability\n? Common source configuration\n? Broadband performances:POUT = 6 W with 13 dB gain @ 870 MHz\n? Plastic package? ESD protection\n? Supplied in tape and reel\n? In compliance with the 2002/95/EC european directive;

          ST

          意法半導(dǎo)體

          PD84002

          Package:TO-243AA;包裝:卷帶(TR) 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:FET RF 25V 870MHZ

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD84006-E

          Package:PowerSO-10 裸露底部焊盤;包裝:托盤 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:FET RF 25V 870MHZ PWRSO-10RF

          STMICROELECTRONICS

          意法半導(dǎo)體

          技術(shù)參數(shù)

          • Package:

            PowerFLAT 5x5 HV

          • Marketing Status:

            Active

          • Grade:

            Industrial

          • Frequency_nom(MHz):

            870

          • Output Power_nom(W):

            6

          • Power Gain_nom(dB):

            14

          • Transistor Supply Voltage_nom(V):

            7.5

          • Efficiency_nom(%):

            55

          • R_th(J-C)_max:

            4

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
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          100500
          一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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          就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
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          更多PD840供應(yīng)商 更新時(shí)間2026-1-20 11:00:00
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