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    NTH4L070N120M3S
    絲?。?a target="_blank" title="Marking" href="/h4l070120m3s/marking.html">H4L070120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L
    
Features
? Typ. RDS(on) = 65 m @ VGS = 18 V
? Ultra Low Gate Charge (QG(tot) = 57 nC)
? High Speed Switching with Low Capacitance (Coss = 57 pF)
? 100 Avalanche Tested
? This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb?Free 2LI (on second level interconnection)
Typical A
    文件：356.3 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NTH4L075N065SC1
    Silicon Carbide SiC MOSFET - 57 mohm, 650 V, M2, TO-247-4L
    
Features
? Typ. RDS(on) = 57 m @ VGS = 18 V
Typ. RDS(on) = 75 m @ VGS = 15 V
? Ultra Low Gate Charge (QG(tot) = 61 nC)
? Low Output Capacitance (Coss = 107 pF)
? 100 Avalanche Tested
? TJ = 175°C
? This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb?Free 2LI (on second le
    文件：320 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NTH4L080N120SC1
    Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
    
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits incl
    文件：409.41 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NTH4L080N120SC1
    Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L
    
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits incl
    文件：411.64 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NTH4L080N120SC1
    SiC N-Channel MOSFET
    
FEATURES
·High Speed Switching with Low Capacitances
·High Blocking Voltage with Low On-Resistance
·Easy to Parallel and Simple to Drive
APPLICATIONS
·Solar Inverters
·Switch Mode Power Supplies
·High-voltage Capacitive Loads
·Motor drives
    文件：360.35 Kbytes 頁(yè)數(shù)：3 Pages
    ISC
    無(wú)錫固電
    

    NTH4L080N120SC1_V01
    Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
    
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits incl
    文件：409.41 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NTH4L080N120SC1_V02
    Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L
    
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits incl
    文件：411.64 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NTH4L095N065SC1
    MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 70 m, 31 A
    
Features
? Typ. RDS(on) = 70 m @ VGS = 18 V
Typ. RDS(on) = 95 m @ VGS = 15 V
? Ultra Low Gate Charge (QG(tot) = 50 nC)
? Low Output Capacitance (Coss = 89 pF)
? 100% Avalanche Tested
? TJ = 175°C
? This Device is Pb?Free and is RoHS Compliant
Typical Applications
? SMPS (Switching M
    文件：344.09 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NTH4L160N120SC1
    Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L
    
Features
? Typ. RDS(on) = 160 m
? Ultra Low Gate Charge (QG(tot) = 34 nC)
? High Speed Switching with Low Capacitance (Coss = 49.5 pF)
? 100 Avalanche Tested
? TJ = 175°C
? This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb?Free 2LI (on second level interconnection)

Typ
    文件：357.43 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NTH4L160N120SC1
    Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L
    
Features
? Typ. RDS(on) = 160 m
? Ultra Low Gate Charge (QG(tot) = 34 nC)
? High Speed Switching with Low Capacitance (Coss = 49.5 pF)
? 100 Avalanche Tested
? TJ = 175°C
? This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb?Free 2LI (on second level interconnection)

Typ
    文件：356.61 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Pb-free：
      Pb
    • Status：
      Active
    • Channel Polarity：
      N-Channel
    • Configuration：
      Single
    • V(BR)DSS Min (V)：
      650
    • VGS Max (V)：
      30
    • VGS(th) Max (V)：
      5
    • ID Max (A)：
      75
    • PD Max (W)：
      595
    • RDS(on) Max @ VGS = 10 V(mΩ)：
      27.4
    • Qg Typ @ VGS = 4.5 V (nC)：
      6
    • Qg Typ @ VGS = 10 V (nC)：
      259
    • Ciss Typ (pF)：
      7690
    • Package Type：
      TO-247-3
    
            
    
        
    
            
    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    
                
    



    Apex Tool Group/Cooper Tools
    		

    2022+
    		

    		

    44
    		

    全新原裝 貨期兩周
    		
詢價(jià)
    

    



    Apex
    		

    1824+
    		

    NA
    		

    121
    		

    加我QQ或微信咨詢更多詳細(xì)信息,
    		
詢價(jià)
    

    



    VISHAY
    		

    23+
    		

    SMD
    		

    8560
    		

    受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
    		
詢價(jià)
    

    



    ON
    		

    		

    QFN
    		

    1670
    		

    正品原裝--自家現(xiàn)貨-實(shí)單可談
    		
詢價(jià)
    

    



    ON
    		

    24+
    		

    1206-8
    		

    20000
    		

    全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！
    		
詢價(jià)
    

    



    ON
    		

    1645+
    		

    ?
    		

    7500
    		

    只做原裝進(jìn)口,假一罰十
    		
詢價(jià)
    

    



    ONSEMI
    		

    23+
    		

    TO-247
    		

    450
    		

    正規(guī)渠道,只有原裝!
    		
詢價(jià)
    

    



    Vishay(威世)
    		

    2511
    		

    0402
    		

    36000
    		

    電子元器件采購(gòu)降本 30%!原廠直采,砍掉中間差價(jià)
    		
詢價(jià)
    

    



    MURATA
    		

    2023+
    		

    原廠封裝
    		

    50000
    		

    原裝現(xiàn)貨
    		
詢價(jià)
    

    



    INFINEON
    		

    22+
    		

    TO247
    		

    450
    		

    全新原裝
    		
詢價(jià)
    

            
    
        
    
        
    更多NTH供應(yīng)商
            更新時(shí)間2026-1-22 9:50:00
        
    
        
    
          
    
            
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