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          首頁 >NTH>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NTH1212M

          Isolated 2W Dual Output SM DC-DC Converters

          DESCRIPTION The NTH series of miniature surface mounted DC-DC Converters employ leadframe technology and transfer moulding techniques to bring all of the benefits of IC style packaging to hybrid circuitry. The component lead termination of this product range is lead free compatible, therefore t

          文件:609.19 Kbytes 頁數(shù):2 Pages

          CANDD

          NTH1215M

          Isolated 2W Dual Output SM DC-DC Converters

          DESCRIPTION The NTH series of miniature surface mounted DC-DC Converters employ leadframe technology and transfer moulding techniques to bring all of the benefits of IC style packaging to hybrid circuitry. The component lead termination of this product range is lead free compatible, therefore t

          文件:609.19 Kbytes 頁數(shù):2 Pages

          CANDD

          NTH4L013N120M3S

          Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200V, M3S, TO-247-4L

          Features ? Typ. RDS(on) = 13 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 254 nC) ? High Speed Switching with Low Capacitance (Coss = 262 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typical

          文件:368.6 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTH4L014N120M3P

          Silicon Carbide SiC MOSFET - 14mohm, 1200V, M3, TO247-4L

          Features ? Typ. RDS(on) = 14 m @ VGS = 18 V ? Low Switching Losses (Typ. EON 1308 J at 74 A, 800 V) ? 100 Avalanche Tested ? These Devices are RoHS Compliant Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? UPS (Uninterruptible Power Supplies) ? Energy Sto

          文件:329.15 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTH4L015N065SC1

          Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

          Features ? Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 283 nC) ? High Speed Switching with Low Capacitance (Coss = 430 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Fr

          文件:357.1 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTH4L015N065SC1

          Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

          Features ? Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 283 nC) ? High Speed Switching with Low Capacitance (Coss = 430 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Fr

          文件:356.49 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTH4L015N065SC1_V01

          Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

          Features ? Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 283 nC) ? High Speed Switching with Low Capacitance (Coss = 430 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Fr

          文件:357.1 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTH4L015N065SC1_V02

          Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

          Features ? Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 283 nC) ? High Speed Switching with Low Capacitance (Coss = 430 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Fr

          文件:356.49 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTH4L018N075SC1

          Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750V, M2, TO-247-4L

          Features ? Typ. RDS(on) = 13.5 m @ VGS = 18 V Typ. RDS(on) = 18 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 262 nC) ? High Speed Switching with Low Capacitance (Coss = 365 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?

          文件:262.59 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTH4L020N090SC1

          絲?。?a target="_blank" title="Marking" href="/h4l020090sc1/marking.html">H4L020090SC1;Package:TO247-4L;Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L

          Features ? Typ. RDS(on) = 20 m @ VGS = 15 V Typ. RDS(on) = 16 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 196 nC) ? Low Effective Output Capacitance (Coss = 296 pF) ? 100 UIL Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level inter

          文件:331.89 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            650

          • VGS Max (V):

            30

          • VGS(th) Max (V):

            5

          • ID Max (A):

            75

          • PD Max (W):

            595

          • RDS(on) Max @ VGS = 10 V(mΩ):

            27.4

          • Qg Typ @ VGS = 4.5 V (nC):

            6

          • Qg Typ @ VGS = 10 V (nC):

            259

          • Ciss Typ (pF):

            7690

          • Package Type:

            TO-247-3

          供應(yīng)商型號品牌批號封裝庫存備注價格
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          更多NTH供應(yīng)商 更新時間2026-1-19 16:06:00
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