| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm Features ? Typ. RDS(on) = 28 m @ VGS = 20 V ? Ultra Low Gate Charge (QG(tot) = 200 nC) ? High Speed Switching with Low Capacitance (Coss = 200 pF) ? 100% Avalanche Tested ? These Devices are Pb?Free and are RoHS Compliant Typical Applications ? UPS ? DC/DC Converter ? Boost Convert 文件：253.15 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/h4l030120m3s/marking.html">H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L Features ? Typ. RDS(on) = 29 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 107 nC) ? High Speed Switching with Low Capacitance (Coss = 106 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typical 文件：359.47 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L Features ? Typical RDS(ON) = 32 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 55 nC) ? High Speed Switching with Low Capacitance (Coss = 114 pF) ? 100% Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) 文件：189.55 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L Features ? Typical RDS(ON) = 32 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 55 nC) ? High Speed Switching with Low Capacitance (Coss = 114 pF) ? 100% Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) 文件：353.32 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L Features ? Typical RDS(ON) = 32 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 55 nC) ? High Speed Switching with Low Capacitance (Coss = 114 pF) ? 100% Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) 文件：353.32 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L Features ? Typ. RDS(on) = 40 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 75 nC) ? High Speed Switching with Low Capacitance (Coss = 80 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typical 文件：357.6 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features ? Typ. RDS(on) = 40 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 75 nC) ? High Speed Switching with Low Capacitance (Coss = 80 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typical 文件：253 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features ? Typ. RDS(on) = 40 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 75 nC) ? High Speed Switching with Low Capacitance (Coss = 80 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typical 文件：265.22 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features ? Typ. RDS(on) = 40 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 75 nC) ? High Speed Switching with Low Capacitance (Coss = 80 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typical 文件：265.22 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L Features ? Typ. RDS(on) = 40 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 75 nC) ? High Speed Switching with Low Capacitance (Coss = 80 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typical 文件：357.6 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Pb-free：
Pb
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
650
- VGS Max (V)：
30
- VGS(th) Max (V)：
5
- ID Max (A)：
75
- PD Max (W)：
595
- RDS(on) Max @ VGS = 10 V(mΩ)：
27.4
- Qg Typ @ VGS = 4.5 V (nC)：
6
- Qg Typ @ VGS = 10 V (nC)：
259
- Ciss Typ (pF)：
7690
- Package Type：
TO-247-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ApexToolGroup/CooperTool |
新 |
48 |
全新原裝 貨期兩周 |
詢價 | |||
Apex Tool Group/Cooper Tools |
2022+ |
44 |
全新原裝 貨期兩周 |
詢價 | |||
Apex |
1824+ |
NA |
121 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
C&D |
25+ |
SMD12 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 | ||
ON(安森美) |
2447 |
TO-247-3 |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
murata |
13+ |
NA |
21238 |
原裝分銷 |
詢價 | ||
24+ |
22963 |
詢價 | |||||
VISHHY |
25+ |
2568 |
原裝優(yōu)勢!絕對公司現(xiàn)貨 |
詢價 | |||
ON/安森美 |
23+ |
1206-8 |
8678 |
原廠原裝 |
詢價 | ||
ON |
1645+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價 |
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