| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (QG(tot) = 106 nC) ? High Speed Switching with Low Capacitance (Coss = 137 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typi 文件：360.84 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (QG(tot) = 106 nC) ? High Speed Switching with Low Capacitance (Coss = 137 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typica 文件：361.86 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
SiC N-Channel MOSFET FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives 文件：361.02 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | ||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (QG(tot) = 106 nC) ? High Speed Switching with Low Capacitance (Coss = 137 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typi 文件：360.84 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (QG(tot) = 106 nC) ? High Speed Switching with Low Capacitance (Coss = 137 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typica 文件：361.86 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide SiC MOSFET - 33 mohm, 650V, M2, TO-247-4L Features ? Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 105 nC) ? High Speed Switching with Low Capacitance (Coss = 162 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Fr 文件：325.79 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L Features ? Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 105 nC) ? High Speed Switching with Low Capacitance (Coss = 162 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Fr 文件：350.4 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L Features ? Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 105 nC) ? High Speed Switching with Low Capacitance (Coss = 162 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Fr 文件：350.4 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide SiC MOSFET - 44 mohm, 650 V, M2, TO-247-4L Features ? Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 74 nC) ? Low Capacitance (Coss = 133 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level int 文件：319.24 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide SiC MOSFET - 60 mohm, 900V, M2, TO-247-4L Features ? Typ. RDS(on) = 60 m @ VGS = 15 V Typ. RDS(on) = 43 m @ VGS = 18 V ? Ultra Low Gate Charge (typ. QG(tot) = 87 nC) ? Low Effective Output Capacitance (typ. Coss = 113 pF) ? 100 UIL Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second le 文件：895.48 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Pb-free：
Pb
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
650
- VGS Max (V)：
30
- VGS(th) Max (V)：
5
- ID Max (A)：
75
- PD Max (W)：
595
- RDS(on) Max @ VGS = 10 V(mΩ)：
27.4
- Qg Typ @ VGS = 4.5 V (nC)：
6
- Qg Typ @ VGS = 10 V (nC)：
259
- Ciss Typ (pF)：
7690
- Package Type：
TO-247-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ApexToolGroup/CooperTool |
新 |
48 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Apex Tool Group/Cooper Tools |
2022+ |
44 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Apex |
1824+ |
NA |
121 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
murata |
13+ |
NA |
21238 |
原裝分銷 |
詢價(jià) | ||
VISHHY |
25+ |
2568 |
原裝優(yōu)勢!絕對公司現(xiàn)貨 |
詢價(jià) | |||
ON |
24+ |
SOP-8 |
25000 |
一級專營品牌全新原裝熱賣 |
詢價(jià) | ||
ON |
20+ |
SSOP-8 |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價(jià) | ||
PERICOM/SARONIX |
XX |
OSCILLATOR/NTH089/0°C~+8 |
347 |
原裝香港現(xiàn)貨真實(shí)庫存。低價(jià) |
詢價(jià) | ||
C&D |
25+ |
SMD12 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
ON |
24+ |
SOT-283 |
66800 |
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！ |
詢價(jià) |
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