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          首頁(yè) >NP5>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NP50P06KDG-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ?Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= ?10 V, ID= ?25 A) RDS(on)2= 23 mΩMAX. (VGS= ?4.5 V, ID= ?25 A) ?Low input capacitance

          文件:184.9 Kbytes 頁(yè)數(shù):7 Pages

          NEC

          瑞薩

          NP50P06SDG

          -60V – -50A – P-channel Power MOS FET Application : Automotive

          Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 16.5 m? Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23.0 m? Max. ( VGS = -4.5 V, ID = -25 A ) ? Low input capacitance : Ciss

          文件:1.35796 Mbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP50P06SDG-E1-AY

          -60V – -50A – P-channel Power MOS FET Application : Automotive

          Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 16.5 m? Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23.0 m? Max. ( VGS = -4.5 V, ID = -25 A ) ? Low input capacitance : Ciss

          文件:1.35796 Mbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP52N055SUG

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:298.34 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無錫固電

          NP52N06SLG

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:298.77 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無錫固電

          NP55N03SUG

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:298.98 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無錫固電

          NP55N04SLG

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:299.15 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無錫固電

          NP55N04SLG

          MOS FIELD EFFECT TRANSISTOR

          Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Channel temperature 175 degree rating ? Super low on-state resistance ? RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ? RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, I

          文件:255.65 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP55N04SLG-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Channel temperature 175 degree rating ? Super low on-state resistance ? RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ? RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, I

          文件:255.65 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP55N04SLG-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Channel temperature 175 degree rating ? Super low on-state resistance ? RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ? RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, I

          文件:255.65 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          技術(shù)參數(shù)

          • IT(AV)/IF(AV) Tc =?85℃ (A):

            50

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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          3000
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          RENESAS
          17+
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          12
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          1415+
          TO-252
          28500
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          MMC
          25+
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          18000
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          N
          24+
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          5000
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          17+
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          9800
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          1998
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          130
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          22+
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          2000
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          25+
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          2140
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          更多NP5供應(yīng)商 更新時(shí)間2026-1-20 16:01:00
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