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          首頁 >NP5>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NP5

          Packing List Envelopes

          文件:15.17 Kbytes 頁數(shù):2 Pages

          3M

          NP50N04YUK

          40 V – 50 A – N-channel Power MOS FET Application: Automotive

          Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 4.8 m? MAX. (VGS = 10 V, ID = 25 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qualif

          文件:275.23 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP50N04YUK_V01

          40 V – 50 A – N-channel Power MOS FET Application: Automotive

          Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 4.8 m? MAX. (VGS = 10 V, ID = 25 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qualif

          文件:275.23 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP50N04YUK-E1-AY

          40 V – 50 A – N-channel Power MOS FET Application: Automotive

          Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 4.8 m? MAX. (VGS = 10 V, ID = 25 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qualif

          文件:275.23 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP50N04YUK-E2-AY

          40 V – 50 A – N-channel Power MOS FET Application: Automotive

          Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 4.8 m? MAX. (VGS = 10 V, ID = 25 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qualif

          文件:275.23 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP50P03YDG

          MOS FIELD EFFECT TRANSISTOR

          Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on) = 8.4 mΩ MAX. (VGS = ?10 V, ID = ?25 A) ? Low Ciss: Ciss = 2300 pF TYP. (VDS = ?25 V, VGS = 0 V) ? Designed for automotive app

          文件:238.04 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP50P03YDG-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on) = 8.4 mΩ MAX. (VGS = ?10 V, ID = ?25 A) ? Low Ciss: Ciss = 2300 pF TYP. (VDS = ?25 V, VGS = 0 V) ? Designed for automotive app

          文件:238.04 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP50P03YDG-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on) = 8.4 mΩ MAX. (VGS = ?10 V, ID = ?25 A) ? Low Ciss: Ciss = 2300 pF TYP. (VDS = ?25 V, VGS = 0 V) ? Designed for automotive app

          文件:238.04 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP50P04KDG

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = ?10 V, ID = ?25 A) RDS(on)2 = 15 mΩ MAX. (VGS = ?4.5 V, ID = ?25 A) ? Low input capacitance Ci

          文件:181.45 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP50P04KDG-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = ?10 V, ID = ?25 A) RDS(on)2 = 15 mΩ MAX. (VGS = ?4.5 V, ID = ?25 A) ? Low input capacitance Ci

          文件:181.45 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          技術(shù)參數(shù)

          • IT(AV)/IF(AV) Tc =?85℃ (A):

            50

          供應(yīng)商型號品牌批號封裝庫存備注價格
          24+
          3000
          公司存貨
          詢價
          RENESAS
          17+
          TO-252
          6200
          100%原裝正品現(xiàn)貨
          詢價
          MMCNETEORKS
          24+
          12
          原裝現(xiàn)貨,可開13%稅票
          詢價
          NEC
          1415+
          TO-252
          28500
          全新原裝正品,優(yōu)勢熱賣
          詢價
          MMC
          25+
          BGA
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          N
          24+
          TO252
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價
          NPL
          17+
          MQFP
          9800
          只做全新進(jìn)口原裝,現(xiàn)貨庫存
          詢價
          NPL
          1998
          MQFP
          130
          原裝現(xiàn)貨海量庫存歡迎咨詢
          詢價
          MMC
          22+
          BGA
          2000
          原裝正品現(xiàn)貨
          詢價
          MMC
          25+
          BGA
          2140
          全新原裝!現(xiàn)貨特價供應(yīng)
          詢價
          更多NP5供應(yīng)商 更新時間2026-1-20 16:01:00
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