| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = ?10 V, ID = ?25 A) RDS(on)2 = 15 mΩ MAX. (VGS = ?4.5 V, ID = ?25 A) ? Low input capacitance Ci 文件：181.45 Kbytes 頁數(shù)：7 Pages | NEC 瑞薩 | NEC | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -40V, ID= -13A RDS(ON) 文件：1.1385 Mbytes 頁數(shù)：5 Pages | BYCHIP 百域芯 | BYCHIP | ||
P-Channel 40 V (D-S) MOSFET FEATURES ? TrenchFET? power MOSFET ? Package with low thermal resistance ? 100 Rg and UIS tested 文件：1.07808 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on)1 = 9.6 mΩ MAX. (VGS = ?10 V, ID = ?25 A) ? RDS(on)2 = 15 mΩ MAX. (VGS = ?4.5 V, ID = ?25 A) ? Low input capacitance 文件：241.04 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on)1 = 9.6 mΩ MAX. (VGS = ?10 V, ID = ?25 A) ? RDS(on)2 = 15 mΩ MAX. (VGS = ?4.5 V, ID = ?25 A) ? Low input capacitance 文件：241.04 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on)1 = 9.6 mΩ MAX. (VGS = ?10 V, ID = ?25 A) ? RDS(on)2 = 15 mΩ MAX. (VGS = ?4.5 V, ID = ?25 A) ? Low input capacitance 文件：241.04 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
-60V – -50A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 17 m? Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23 m? Max. ( VGS = -4.5 V, ID = -25 A ) ? Low input capacitance : Ciss = 50 文件：1.33025 Mbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ?Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= ?10 V, ID= ?25 A) RDS(on)2= 23 mΩMAX. (VGS= ?4.5 V, ID= ?25 A) ?Low input capacitance 文件：184.9 Kbytes 頁數(shù)：7 Pages | NEC 瑞薩 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ?Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= ?10 V, ID= ?25 A) RDS(on)2= 23 mΩMAX. (VGS= ?4.5 V, ID= ?25 A) ?Low input capacitance 文件：184.9 Kbytes 頁數(shù)：7 Pages | NEC 瑞薩 | NEC | ||
-60V – -50A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 17 m? Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23 m? Max. ( VGS = -4.5 V, ID = -25 A ) ? Low input capacitance : Ciss = 50 文件：1.33025 Mbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS |
技術(shù)參數(shù)
- IT(AV)/IF(AV) Tc =?85℃ (A)：
50
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
3000 |
公司存貨 |
詢價 | ||||
RENESAS |
17+ |
TO-252 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
MMCNETEORKS |
24+ |
12 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | |||
NEC |
1415+ |
TO-252 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價 | ||
MMC |
25+ |
BGA |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
N |
24+ |
TO252 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
NPL |
17+ |
MQFP |
9800 |
只做全新進口原裝,現(xiàn)貨庫存 |
詢價 | ||
NPL |
1998 |
MQFP |
130 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
MMC |
22+ |
BGA |
2000 |
原裝正品現(xiàn)貨 |
詢價 | ||
MMC |
25+ |
BGA |
2140 |
全新原裝!現(xiàn)貨特價供應(yīng) |
詢價 |
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