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          首頁(yè) >NP10>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NP100P06PDG-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID(

          文件:191.09 Kbytes 頁(yè)數(shù):7 Pages

          NEC

          瑞薩

          NP100P06PDG-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID(

          文件:191.09 Kbytes 頁(yè)數(shù):7 Pages

          NEC

          瑞薩

          NP100P06PLG

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID

          文件:189.76 Kbytes 頁(yè)數(shù):7 Pages

          NEC

          瑞薩

          NP100P06PLG

          -60V – -100A – P-channel Power MOS FET Application : Automotive

          Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 6.0 m? Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m? Max. ( VGS = -4.5 V, ID = -50 A ) ? Low input capacitance : Ciss =

          文件:1.36064 Mbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP100P06PLG-E1-AY

          -60V – -100A – P-channel Power MOS FET Application : Automotive

          Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 6.0 m? Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m? Max. ( VGS = -4.5 V, ID = -50 A ) ? Low input capacitance : Ciss =

          文件:1.36064 Mbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP100P06PLG-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID

          文件:189.76 Kbytes 頁(yè)數(shù):7 Pages

          NEC

          瑞薩

          NP100P06PLG-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID

          文件:189.76 Kbytes 頁(yè)數(shù):7 Pages

          NEC

          瑞薩

          NP109N04PUG

          MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

          DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) ? High current rating ID(DC) = ±110 A

          文件:235.02 Kbytes 頁(yè)數(shù):8 Pages

          NEC

          瑞薩

          NP109N04PUG

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:345.32 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          NP109N04PUG-E1-AY

          MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

          DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) ? High current rating ID(DC) = ±110 A

          文件:235.02 Kbytes 頁(yè)數(shù):8 Pages

          NEC

          瑞薩

          詳細(xì)參數(shù)

          • 型號(hào):

            NP10

          • 制造商:

            NEC

          • 制造商全稱:

            NEC

          • 功能描述:

            MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          NEC
          23+
          TO-263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          NEC
          24+
          TO-263
          60000
          全新原裝現(xiàn)貨
          詢價(jià)
          R
          TO263
          22+
          6000
          十年配單,只做原裝
          詢價(jià)
          RENESAS/瑞薩
          23+
          TO-263
          89630
          當(dāng)天發(fā)貨全新原裝現(xiàn)貨
          詢價(jià)
          RENESAS/瑞薩
          22+
          TO-263
          9000
          專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
          詢價(jià)
          R
          25+
          TO263
          37650
          獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
          詢價(jià)
          NEC
          26+
          原廠原封裝
          86720
          全新原裝進(jìn)口現(xiàn)貨價(jià)格優(yōu)惠 本公司承諾原裝正品假一賠
          詢價(jià)
          Renesas Electronics America
          2022+
          -
          38550
          全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
          詢價(jià)
          RENESAS/瑞薩
          23+
          MP-25ZPTO-263
          32687
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
          詢價(jià)
          RENESAS/瑞薩
          22+
          TO-263
          100000
          代理渠道/只做原裝/可含稅
          詢價(jià)
          更多NP10供應(yīng)商 更新時(shí)間2026-1-20 11:00:00
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