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          首頁 >NP10>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NP100N055PUK-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Features ? Super low on-state resistance RDS(on) = 3.25 m? MAX. (VGS = 10 V, ID = 50 A) ? Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) ? Designed for automotive application and AEC-Q101 qualified

          文件:268.66 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP100P04PDG

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID

          文件:190.95 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP100P04PDG-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID

          文件:190.95 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP100P04PDG-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID

          文件:190.95 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP100P04PLG

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID(D

          文件:191.11 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP100P04PLG-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID(D

          文件:191.11 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP100P04PLG-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID(D

          文件:191.11 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP100P06PDG

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID(

          文件:191.09 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP100P06PDG

          -60V – -100A – P-channel Power MOS FET Application : Automotive

          Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 6.0 m? Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m? Max. ( VGS = -4.5 V, ID = -50 A ) ? Low input capacitance : Ciss =

          文件:1.35852 Mbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP100P06PDG-E1-AY

          -60V – -100A – P-channel Power MOS FET Application : Automotive

          Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 6.0 m? Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m? Max. ( VGS = -4.5 V, ID = -50 A ) ? Low input capacitance : Ciss =

          文件:1.35852 Mbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          詳細參數(shù)

          • 型號:

            NP10

          • 制造商:

            NEC

          • 制造商全稱:

            NEC

          • 功能描述:

            MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

          供應商型號品牌批號封裝庫存備注價格
          NEC
          23+
          TO-263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          NEC
          24+
          TO-263
          60000
          全新原裝現(xiàn)貨
          詢價
          R
          TO263
          22+
          6000
          十年配單,只做原裝
          詢價
          RENESAS/瑞薩
          23+
          TO-263
          89630
          當天發(fā)貨全新原裝現(xiàn)貨
          詢價
          RENESAS/瑞薩
          22+
          TO-263
          9000
          專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
          詢價
          R
          25+
          TO263
          37650
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          NEC
          26+
          原廠原封裝
          86720
          全新原裝進口現(xiàn)貨價格優(yōu)惠 本公司承諾原裝正品假一賠
          詢價
          Renesas Electronics America
          2022+
          -
          38550
          全新原裝 支持表配單 中國著名電子元器件獨立分銷
          詢價
          RENESAS/瑞薩
          23+
          MP-25ZPTO-263
          32687
          原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          RENESAS/瑞薩
          22+
          TO-263
          100000
          代理渠道/只做原裝/可含稅
          詢價
          更多NP10供應商 更新時間2026-1-19 11:04:00
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