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          首頁 >NE4>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NE425S01-T1B

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF =

          文件:57.5 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NE428M01

          HETERO JUNCTION FIELD EFFECT TRANSISTOR

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          文件:234.99 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NE428M01-T1

          HETERO JUNCTION FIELD EFFECT TRANSISTOR

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          文件:234.99 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NE429M01

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES ? Super low noise figure & High associated gain

          文件:50.82 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NE429M01

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for second and third stage low noise amplifiers in DBS, TVRO and other commercial systems. NECs stringent quali

          文件:58.47 Kbytes 頁數(shù):6 Pages

          CEL

          NE429M01-T1

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES ? Super low noise figure & High associated gain

          文件:50.82 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NE429M01-T1

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for second and third stage low noise amplifiers in DBS, TVRO and other commercial systems. NECs stringent quali

          文件:58.47 Kbytes 頁數(shù):6 Pages

          CEL

          NE434S01

          C BAND SUPER LOW NOISE HJ FET

          DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES ? VERY LOW NOISE FIGURE:

          文件:42.13 Kbytes 頁數(shù):5 Pages

          CEL

          NE434S01

          C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF = 0.3

          文件:77.49 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NE434S01-T1

          C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF = 0.3

          文件:77.49 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            NE4

          • 制造商:

            Essentra Components

          • 類別:

            電纜,電線 - 管理 > 電纜支撐與緊固件

          • 系列:

            Richco

          • 包裝:

            散裝

          • 類型:

            線夾,P 型

          • 開口尺寸:

            0.250"(6.35mm)

          • 安裝類型:

            緊固件

          • 材料:

          • 顏色:

            黑色,銀色

          • 寬度:

            0.375"(9.53mm)

          • 面板孔尺寸:

            0.204"(5.18mm)

          • 材料厚度:

            0.031"(0.80mm)

          • 特性:

            保護(hù)涂層

          • 描述:

            CBL CLAMP P-TYPE FASTENER

          供應(yīng)商型號品牌批號封裝庫存備注價格
          Richco
          5953
          全新原裝 貨期兩周
          詢價
          Richco
          2022+
          5949
          全新原裝 貨期兩周
          詢價
          Essentra
          22+
          NA
          3597
          加我QQ或微信咨詢更多詳細(xì)信息,
          詢價
          NEC
          25+
          SOT26
          1560
          強調(diào)現(xiàn)貨,隨時查詢!
          詢價
          PHI
          88+
          DIP8
          283
          全新原裝進(jìn)口自己庫存優(yōu)勢
          詢價
          PHI
          23+
          SO-8
          7000
          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
          詢價
          恩XP
          10+
          DIP-8
          7800
          全新原裝正品,現(xiàn)貨銷售
          詢價
          PHIL
          24+/25+
          44
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          NEC
          17+
          6200
          100%原裝正品現(xiàn)貨
          詢價
          PHI
          00+
          SMD8
          386
          全新原裝100真實現(xiàn)貨供應(yīng)
          詢價
          更多NE4供應(yīng)商 更新時間2026-1-20 16:05:00
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