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          首頁 >NE4>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NE4

          CABLE CLAMPS, PLASTISOL DIPPED

          文件:39.06 Kbytes 頁數(shù):1 Pages

          RICHCO

          NE416

          NPN MEDIUM POWER UHF-VHF TRANSISTOR

          DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used on NECs microwave transistors. The series provides economical solutions to a wide range of amplifier and oscillator problems. Lownoise figures, high gain and high current capabili

          文件:579.8 Kbytes 頁數(shù):13 Pages

          NEC

          瑞薩

          NE4210M01

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain

          文件:79.09 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NE4210M01

          HETERO JUNCTION FIELD EFFECT TRANSISTOR

          DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF =

          文件:193.76 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NE4210M01-T1

          HETERO JUNCTION FIELD EFFECT TRANSISTOR

          DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF =

          文件:193.76 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NE4210M01-T1

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain

          文件:79.09 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NE4210S01

          X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF = 0.5 dB T

          文件:65.23 Kbytes 頁數(shù):16 Pages

          NEC

          瑞薩

          NE4210S01

          SUPER LOW NOISE HJ FET

          DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n

          文件:252.15 Kbytes 頁數(shù):7 Pages

          CEL

          NE4210S01

          HETERO JUNCTION FIELD EFFECT TRANSISTOR

          DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP.

          文件:199.83 Kbytes 頁數(shù):18 Pages

          RENESAS

          瑞薩

          NE4210S01-T1

          HETERO JUNCTION FIELD EFFECT TRANSISTOR

          DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP.

          文件:199.83 Kbytes 頁數(shù):18 Pages

          RENESAS

          瑞薩

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            NE4

          • 制造商:

            Essentra Components

          • 類別:

            電纜,電線 - 管理 > 電纜支撐與緊固件

          • 系列:

            Richco

          • 包裝:

            散裝

          • 類型:

            線夾,P 型

          • 開口尺寸:

            0.250"(6.35mm)

          • 安裝類型:

            緊固件

          • 材料:

          • 顏色:

            黑色,銀色

          • 寬度:

            0.375"(9.53mm)

          • 面板孔尺寸:

            0.204"(5.18mm)

          • 材料厚度:

            0.031"(0.80mm)

          • 特性:

            保護(hù)涂層

          • 描述:

            CBL CLAMP P-TYPE FASTENER

          供應(yīng)商型號品牌批號封裝庫存備注價格
          Richco
          5953
          全新原裝 貨期兩周
          詢價
          Richco
          2022+
          5949
          全新原裝 貨期兩周
          詢價
          Essentra
          22+
          NA
          3597
          加我QQ或微信咨詢更多詳細(xì)信息,
          詢價
          NEC
          25+
          SOT26
          1560
          強(qiáng)調(diào)現(xiàn)貨,隨時查詢!
          詢價
          PHI
          88+
          DIP8
          283
          全新原裝進(jìn)口自己庫存優(yōu)勢
          詢價
          PHI
          23+
          SO-8
          7000
          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
          詢價
          恩XP
          10+
          DIP-8
          7800
          全新原裝正品,現(xiàn)貨銷售
          詢價
          PHIL
          24+/25+
          44
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          NEC
          17+
          6200
          100%原裝正品現(xiàn)貨
          詢價
          PHI
          00+
          SMD8
          386
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢價
          更多NE4供應(yīng)商 更新時間2026-1-20 16:05:00
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