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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          NE4210S01-T1
          SUPER LOW NOISE HJ FET
          
DESCRIPTION
NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n
          文件：252.15 Kbytes 頁(yè)數(shù)：7 Pages
          CEL
          

          NE4210S01-T1
          X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
          
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
? Super Low Noise Figure & High Associated Gain NF = 0.5 dB T
          文件：65.23 Kbytes 頁(yè)數(shù)：16 Pages
          NEC
          瑞薩
          

          NE4210S01-T1B
          X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
          
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
? Super Low Noise Figure & High Associated Gain NF = 0.5 dB T
          文件：65.23 Kbytes 頁(yè)數(shù)：16 Pages
          NEC
          瑞薩
          

          NE4210S01-T1B
          SUPER LOW NOISE HJ FET
          
DESCRIPTION
NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n
          文件：252.15 Kbytes 頁(yè)數(shù)：7 Pages
          CEL
          

          NE4210S01-T1B
          HETERO JUNCTION FIELD EFFECT TRANSISTOR
          
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
? Super Low Noise Figure & High Associated Gain
NF = 0.5 dB TYP.
          文件：199.83 Kbytes 頁(yè)數(shù)：18 Pages
          RENESAS
          瑞薩
          

          NE4211M01
          HETERO JUNCTION FIELD EFFECT TRANSISTOR
          
FEATURES
? Super low noise figure & associated gain:
NF = 0.75 TYP., Ga = 12 dB TYP. @ f = 12 GHz
NF = 0.4 TYP., Ga = 16 dB TYP. @ f = 4 GHz
? 6-pin super minimold package
? Gate width: Wg = 160 mm
          文件：206.81 Kbytes 頁(yè)數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NE4211M01-T1
          絲印：V74；HETERO JUNCTION FIELD EFFECT TRANSISTOR
          
FEATURES
? Super low noise figure & associated gain:
NF = 0.75 TYP., Ga = 12 dB TYP. @ f = 12 GHz
NF = 0.4 TYP., Ga = 16 dB TYP. @ f = 4 GHz
? 6-pin super minimold package
? Gate width: Wg = 160 mm
          文件：206.81 Kbytes 頁(yè)數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NE42484A
          HETERO JUNCTION FIELD EFFECT TRANSISTOR
          
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET

DESCRIPTION
The NE42484A is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FE
          文件：189 Kbytes 頁(yè)數(shù)：12 Pages
          RENESAS
          瑞薩
          

          NE42484A-SL
          絲?。?a target="_blank" title="Marking" href="/m/marking.html">M；HETERO JUNCTION FIELD EFFECT TRANSISTOR
          
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET

DESCRIPTION
The NE42484A is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FE
          文件：189 Kbytes 頁(yè)數(shù)：12 Pages
          RENESAS
          瑞薩
          

          NE42484A-T1
          絲?。?a target="_blank" title="Marking" href="/m/marking.html">M；HETERO JUNCTION FIELD EFFECT TRANSISTOR
          
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET

DESCRIPTION
The NE42484A is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FE
          文件：189 Kbytes 頁(yè)數(shù)：12 Pages
          RENESAS
          瑞薩
          

          
            
          
		
        
          
            
          
                
          產(chǎn)品屬性
          
            
          
            
            
            	
          • 產(chǎn)品編號(hào)：
            NE4
          • 制造商：
            Essentra Components
          • 類別：
            電纜，電線 - 管理 > 電纜支撐與緊固件
          • 系列：
            Richco
          • 包裝：
            散裝
          • 類型：
            線夾，P 型
          • 開(kāi)口尺寸：
            0.250"（6.35mm）
          • 安裝類型：
            緊固件
          • 材料：
            鋁
          • 顏色：
            黑色，銀色
          • 寬度：
            0.375"（9.53mm）
          • 面板孔尺寸：
            0.204"（5.18mm）
          • 材料厚度：
            0.031"（0.80mm）
          • 特性：
            保護(hù)涂層
          • 描述：
            CBL CLAMP P-TYPE FASTENER
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          
                
          



          Richco
          		

          新
          		

          		

          5953
          		

          全新原裝 貨期兩周
          		
詢價(jià)
          

          



          Richco
          		

          2022+
          		

          		

          5949
          		

          全新原裝 貨期兩周
          		
詢價(jià)
          

          



          Essentra
          		

          22+
          		

          NA
          		

          3597
          		

          加我QQ或微信咨詢更多詳細(xì)信息,
          		
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          NEC
          		

          25+
          		

          SOT26
          		

          1560
          		

          強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!
          		
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          PHI
          		

          88+
          		

          DIP8
          		

          283
          		

          全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
          		
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          PHI
          		

          23+
          		

          SO-8
          		

          7000
          		

          絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
          		
詢價(jià)
          

          



          恩XP
          		

          10+
          		

          DIP-8
          		

          7800
          		

          全新原裝正品,現(xiàn)貨銷售
          		
詢價(jià)
          

          



          PHIL
          		

          24+/25+
          		

          		

          44
          		

          原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
          		
詢價(jià)
          

          



          NEC
          		

          17+
          		

          		

          6200
          		

          100%原裝正品現(xiàn)貨
          		
詢價(jià)
          

          



          PHI
          		

          00+
          		

          SMD8
          		

          386
          		

          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          		
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          更多NE4供應(yīng)商
            更新時(shí)間2026-1-20 16:05:00
        
          
        
          
          
          
            
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