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          首頁 >NE4>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NE42484A-T1A

          絲印:M;HETERO JUNCTION FIELD EFFECT TRANSISTOR

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

          文件:189 Kbytes 頁數(shù):12 Pages

          RENESAS

          瑞薩

          NE42484C

          HETERO JUNCTION FIELD EFFECT TRANSISTOR

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

          文件:194.62 Kbytes 頁數(shù):12 Pages

          RENESAS

          瑞薩

          NE42484C-SL

          絲?。?a target="_blank" title="Marking" href="/k/marking.html">K;HETERO JUNCTION FIELD EFFECT TRANSISTOR

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

          文件:194.62 Kbytes 頁數(shù):12 Pages

          RENESAS

          瑞薩

          NE42484C-T1

          絲?。?a target="_blank" title="Marking" href="/k/marking.html">K;HETERO JUNCTION FIELD EFFECT TRANSISTOR

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

          文件:194.62 Kbytes 頁數(shù):12 Pages

          RENESAS

          瑞薩

          NE42484C-T1A

          絲?。?a target="_blank" title="Marking" href="/k/marking.html">K;HETERO JUNCTION FIELD EFFECT TRANSISTOR

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

          文件:194.62 Kbytes 頁數(shù):12 Pages

          RENESAS

          瑞薩

          NE425S01

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF =

          文件:57.5 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NE425S01

          C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. NECs stringent quality assurance and test procedures assure the high

          文件:52.2 Kbytes 頁數(shù):5 Pages

          CEL

          NE425S01-T1

          C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF =

          文件:57.5 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NE425S01-T1

          C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. NECs stringent quality assurance and test procedures assure the high

          文件:52.2 Kbytes 頁數(shù):5 Pages

          CEL

          NE425S01-T1B

          C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

          DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. NECs stringent quality assurance and test procedures assure the high

          文件:52.2 Kbytes 頁數(shù):5 Pages

          CEL

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            NE4

          • 制造商:

            Essentra Components

          • 類別:

            電纜,電線 - 管理 > 電纜支撐與緊固件

          • 系列:

            Richco

          • 包裝:

            散裝

          • 類型:

            線夾,P 型

          • 開口尺寸:

            0.250"(6.35mm)

          • 安裝類型:

            緊固件

          • 材料:

          • 顏色:

            黑色,銀色

          • 寬度:

            0.375"(9.53mm)

          • 面板孔尺寸:

            0.204"(5.18mm)

          • 材料厚度:

            0.031"(0.80mm)

          • 特性:

            保護涂層

          • 描述:

            CBL CLAMP P-TYPE FASTENER

          供應(yīng)商型號品牌批號封裝庫存備注價格
          Richco
          5953
          全新原裝 貨期兩周
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          2022+
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          22+
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          3597
          加我QQ或微信咨詢更多詳細信息,
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          25+
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          23+
          SO-8
          7000
          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
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          恩XP
          10+
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          7800
          全新原裝正品,現(xiàn)貨銷售
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          PHIL
          24+/25+
          44
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          17+
          6200
          100%原裝正品現(xiàn)貨
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          PHI
          00+
          SMD8
          386
          全新原裝100真實現(xiàn)貨供應(yīng)
          詢價
          更多NE4供應(yīng)商 更新時間2026-1-21 16:05:00
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