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首頁(yè) >NDT>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
NDT3055L	文件：228.1 Kbytes Page：8 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo 文件：228.1 Kbytes 頁(yè)數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
NDT410EL	文件：228.25 Kbytes Page：10 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching perf 文件：228.25 Kbytes 頁(yè)數(shù)：10 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
NDT451	文件：227.12 Kbytes Page：10 Pages	N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance 文件：227.12 Kbytes 頁(yè)數(shù)：10 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
NDT451AN	文件：227.12 Kbytes Page：10 Pages	N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance 文件：227.12 Kbytes 頁(yè)數(shù)：10 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
NDT452	文件：227.54 Kbytes Page：10 Pages	P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. 文件：227.54 Kbytes 頁(yè)數(shù)：10 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
NDT452	文件：92.94 Kbytes Page：6 Pages	P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. 文件：92.94 Kbytes 頁(yè)數(shù)：6 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
NDT452AP	文件：92.94 Kbytes Page：6 Pages	P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. 文件：92.94 Kbytes 頁(yè)數(shù)：6 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
NDT452P	文件：227.54 Kbytes Page：10 Pages	P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. 文件：227.54 Kbytes 頁(yè)數(shù)：10 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
NDT453N	文件：226.5 Kbytes Page：10 Pages	N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. 文件：226.5 Kbytes 頁(yè)數(shù)：10 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
NDT454	文件：92.24 Kbytes Page：6 Pages	P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. 文件：92.24 Kbytes 頁(yè)數(shù)：6 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD

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技術(shù)參數(shù)

Operating Direction：
Horizontal
Dimensions(mm)(LxWxH)：
4.00 x 5.70 x 2.00
Bosses：
With
Operating Force (gf)：
100
Operating Life：
100
Rating (max)VDC/mA：
12.00/100.00

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市益百分電子有限公司	NDT2955-FAIRCHILD	FAISOT223	13+	FETP-CH60V2.5ASOT-223SMT	0	原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	NDT014L	FSC	05+	原廠原裝	15051	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市粵科源興科技有限公司	NDT3055L_NL	FAIRCHILD	13+	SOT-223	4286	原裝分銷	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	NDT451AN	FAI	25+	DIP-28	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
深圳市一線半導(dǎo)體有限公司	NDT453N	National/NSC	24+	SOT-223	8890	新進(jìn)庫(kù)存/原裝	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	NDT3055L	FAIRCHILD		SOT223	2000	原裝長(zhǎng)期供貨!	詢價(jià)
深圳市利加科技有限公司	NDT451AN	FSC	16+	NA	8800	原裝現(xiàn)貨,貨真價(jià)優(yōu)	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	NDT451AN	FAI	24+		6980	原裝現(xiàn)貨,可開(kāi)13%稅票	詢價(jià)
深圳市卓越微芯電子有限公司	NDT452AP	FSC	25+	SOT223	151	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市勤思達(dá)科技有限公司	NDT454P	FAIRC	1415+	SOT-223	28500	全新原裝正品,優(yōu)勢(shì)熱賣	詢價(jià)

更多NDT供應(yīng)商更新時(shí)間2026-1-20 18:11:00

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