Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range

文件：157.98 Kbytes 頁數(shù)：2 Pages

CANDD

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：225.29 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performan

文件：229.66 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range

文件：157.98 Kbytes 頁數(shù)：2 Pages

CANDD

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range

文件：157.98 Kbytes 頁數(shù)：2 Pages

CANDD

P-Channel Enhancement Mode Field Effect Transistor

General Description This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications. Applications ? DC/DC converter ? Power management

文件：92.02 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：226.26 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

文件：287.25 Kbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/ndt3055l/marking.html">NDT3055L；Package：SOT-223；60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

文件：287.25 Kbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/3055/marking.html">3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92605 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子