P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：92.94 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：227.54 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：92.94 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：227.54 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 35 V (D-S) MOSFET

文件：1.7476 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

P 溝道增強(qiáng)型場效應(yīng)晶體管 -30V，-5A，65mΩ

功率SOT N溝道增強(qiáng)模式功率場效應(yīng)晶體管采用飛兆專有的高密度DMOS技術(shù)生產(chǎn)。 這種密度非常高的工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 這些器件特別適用于筆記本電腦功率管理和DC電機(jī)控制等低電壓應(yīng)用。 ?-5A，-30V。 RDS(ON) = 0.065 RDS(ON) = 0.3 Ω @ VGS = -10VRDS(ON) = 0.1 RDS(ON) = 0.3 Ω @ VGS = -4.5V\n?高密度設(shè)計可實現(xiàn)極低的RDS(ON)。\n?高功率和高電流處理能力，采用廣泛使用的表面貼裝封裝。;

ONSEMI

安森美半導(dǎo)體