N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance

文件：227.12 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

文件：226.48 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance

文件：227.12 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

文件：484.51 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

N-Channel 30 V (D-S) MOSFET

文件：1.00867 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

文件：281.91 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

文件：226.48 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道增強型場效應(yīng)晶體管，30V，7.2A，35mΩ

功率SOT N溝道增強模式功率場效應(yīng)晶體管采用飛兆專有的高密度DMOS技術(shù)生產(chǎn)。 這種密度非常高的工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 這些器件特別適合DC馬達控制和DC/DC轉(zhuǎn)換等低電壓應(yīng)用，此類應(yīng)用需要快速開關(guān)、低線路內(nèi)功率損耗以及抗瞬變能力。 ?7.2 A，30 V。 RDS(ON) = 0.035Ω @ VGS = 10V, RDS(ON) = 0.05Ω @ VGS = 4.5V.\n?高密度設(shè)計可實現(xiàn)極低的RDS(ON)。\n?采用廣泛使用的表面貼裝封裝，具有高功率和高電流處理能力。;

ONSEMI

安森美半導(dǎo)體