isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.08 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 60 V (D-S) MOSFET

文件：1.31361 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHM N–Channel Enhancement–Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50

文件：188.8 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

N??hannel Power MOSFET

文件：207.98 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications.

文件：55.06 Kbytes 頁數(shù)：7 Pages

PHI

PHI