TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo

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MOTOROLA

摩托羅拉

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and

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MOTOROLA

摩托羅拉

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an

文件：179.52 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

TMOS V Power Field Effect Transistor

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHMN–Channel Enhancement–Mode Silicon Gate\nTMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt T

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo

文件：232.47 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 42A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.028Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

TMOS V??Power Field Effect Transistor

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an

文件：179.52 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and

文件：195.75 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉