| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Speeds — Switching Tim 文件：125.02 Kbytes 頁數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ 文件：200.41 Kbytes 頁數(shù)：10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08664 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：301.53 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Speeds — Switching Tim 文件：125.02 Kbytes 頁數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Speeds — Switching Tim 文件：125.02 Kbytes 頁數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ 文件：145.58 Kbytes 頁數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08664 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ 文件：200.41 Kbytes 頁數(shù)：10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ 文件：145.58 Kbytes 頁數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI |
技術(shù)參數(shù)
- VRRM(V)：
1600
- @TC ?(℃)：
85
- IFSM ?(A)：
3400
- VF (V)：
1.30
- IF(A)：
300
- IRRM?(μA)：
20
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
5500 |
現(xiàn)貨,全新原裝 |
詢價 | ||
MOTOROLA |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
NS |
25+ |
TO220 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 | ||
SST |
24+ |
PLCC32L |
15000 |
詢價 | |||
ON |
25+ |
TO-220 |
3000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ON |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
SST |
25+ |
PLCC32L |
1000 |
強(qiáng)調(diào)現(xiàn)貨,隨時查詢! |
詢價 | ||
ST |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ON |
24+ |
TO-220 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價 | ||
ON |
17+ |
TO-220 |
6200 |
詢價 |
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