| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 350V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：301.5 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：301.95 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N-Channel Power MOSFETs, 3.0 A, 350-400 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. ? Low RDs(on) ? VGS 文件：164.92 Kbytes 頁(yè)數(shù)：5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 450V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：301.29 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 450V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：301.29 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS TMOS E-FET? High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offer 文件：251.87 Kbytes 頁(yè)數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS TMOS E-FET? High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offer 文件：251.87 Kbytes 頁(yè)數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
HIGH VOLTAGE POWER MOSFET N-CHANNEL [SEMICONDUCTOR TECHNOLOGY, INC.] HIGH VOLTAGE POWER MOSFET N-CHANNEL CASE OUTLINE: TO-220 文件：37.14 Kbytes 頁(yè)數(shù)：2 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：301.08 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Speeds — Switching Tim 文件：125.02 Kbytes 頁(yè)數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI |
技術(shù)參數(shù)
- VRRM(V)：
1600
- @TC ?(℃)：
85
- IFSM ?(A)：
3400
- VF (V)：
1.30
- IF(A)：
300
- IRRM?(μA)：
20
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
5500 |
現(xiàn)貨,全新原裝 |
詢價(jià) | ||
MOTOROLA |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng) |
詢價(jià) | ||
NS |
25+ |
TO220 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
SST |
24+ |
PLCC32L |
15000 |
詢價(jià) | |||
ON |
25+ |
TO-220 |
3000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
ON |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
SST |
25+ |
PLCC32L |
1000 |
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢! |
詢價(jià) | ||
ST |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
ON |
24+ |
TO-220 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價(jià) | ||
ON |
17+ |
TO-220 |
6200 |
詢價(jià) |
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- SE1
- PI7C8150B
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