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          首頁(yè) >MTP3>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MTP36N06V

          TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM

          TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHM N–Channel Enhancement–Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50

          文件:188.8 Kbytes 頁(yè)數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MTP3LP01N3

          P-Channel 30 V (D-S) MOSFET

          FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

          文件:494.95 Kbytes 頁(yè)數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          MTP3N08L

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:301.55 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          MTP3N100

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:301.41 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          MTP3N100E

          TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

          This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a

          文件:206.35 Kbytes 頁(yè)數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MTP3N120E

          TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

          TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time.

          文件:252.45 Kbytes 頁(yè)數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MTP3N120E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:300.9 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          MTP3N25E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:301.36 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          MTP3N25E

          TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

          TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

          文件:208.49 Kbytes 頁(yè)數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MTP3N35

          N-Channel Power MOSFETs, 3.0 A, 350-400 V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. ? Low RDs(on) ? VGS

          文件:164.92 Kbytes 頁(yè)數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          技術(shù)參數(shù)

          • VRRM(V):

            1600

          • @TC ?(℃):

            85

          • IFSM ?(A):

            3400

          • VF (V):

            1.30

          • IF(A):

            300

          • IRRM?(μA):

            20

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          ON
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          原廠直接發(fā)貨進(jìn)口原裝
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          PLCC32L
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          進(jìn)口原裝正品假一賠十,貨期7-10天
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          更多MTP3供應(yīng)商 更新時(shí)間2026-1-19 14:47:00
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