TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a

文件：206.35 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

文件：304.9 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

恩XP

POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE

文件：44.39 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE

文件：44.39 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POW

文件：197.7 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導體