TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

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MOTOROLA

摩托羅拉

N-Channel 650 V (D-S) MOSFET

文件：1.08667 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

恩XP

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended

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PHI

PHI

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N50E is supplied

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PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

無錫固電