| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：302.08 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHM N–Channel Enhancement–Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 文件：188.8 Kbytes 頁(yè)數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
P-Channel 30 V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter 文件：494.95 Kbytes 頁(yè)數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：301.55 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：301.41 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a 文件：206.35 Kbytes 頁(yè)數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. 文件：252.45 Kbytes 頁(yè)數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：300.9 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：301.36 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v 文件：208.49 Kbytes 頁(yè)數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA |
技術(shù)參數(shù)
- VRRM(V)：
1600
- @TC ?(℃)：
85
- IFSM ?(A)：
1000
- VF (V)：
1.20
- IF(A)：
75
- IRRM?(μA)：
0.3
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SCHURTER/碩特 |
2025+ |
DIP |
32000 |
原裝正品現(xiàn)貨供應(yīng)商原廠渠道物美價(jià)優(yōu) |
詢價(jià) | ||
VBsemi(臺(tái)灣微碧) |
2447 |
TO-220AB |
105000 |
50個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) | ||
MOT/ON |
24+ |
TO-220 |
3500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
MOTOROLA/摩托羅拉 |
00+ |
TO-220 |
122 |
詢價(jià) | |||
FSC/ON |
23+ |
原包裝原封 □□ |
10231 |
原裝進(jìn)口特價(jià)供應(yīng) 特價(jià)，原裝元器件供應(yīng)，支持開(kāi)發(fā)樣品 更多詳細(xì)咨詢 庫(kù)存 |
詢價(jià) | ||
ON/安森美 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
MOT |
00+ |
TO220/ |
2110 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
24+ |
聲寶 |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢 |
詢價(jià) | |||
DIODE |
24+ |
SOP8 |
5000 |
只有原裝 |
詢價(jià) | ||
NJS |
20+ |
1562 |
全新現(xiàn)貨熱賣中歡迎查詢 |
詢價(jià) |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
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相關(guān)庫(kù)存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
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- SI7970DP
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- SI7913DN
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- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
