TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

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MOTOROLA

摩托羅拉

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

文件：191 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 33A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 60mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

文件：240.39 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

P-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

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VBSEMI

微碧半導(dǎo)體

P-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：494.21 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：494.76 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.55 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHM N–Channel Enhancement–Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50

文件：188.8 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉