RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ? Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,

文件：421.6 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ? Typical 2-Carrier N-CDMA Performance for V

文件：584.79 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

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RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ? Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,

文件：421.6 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ? Typical 2-Carrier N-CDMA Performance for V

文件：584.79 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ? Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,

文件：421.6 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ? Typical 2-Carrier N-CDMA Performance for V

文件：584.79 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ? Typical 2-Carrier N-CDMA Performance for V

文件：584.79 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ? Typical 2-Carrier N-CDMA Performance for V

文件：584.79 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs

Overview The MRF19085LR3 and MRF19085LSR3 are designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.\nArchived content is no longer updated and is made available for historical reference only. \n?Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,\nIDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz\nIS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)\n1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured\nover a 30 kHz Bandwidth at f1 –885 Khz and ;

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