RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

文件：391.9 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W–CDMA Performance for 214

文件：556.53 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFET

Overview MRF21090R3, MRF21090SR3 removed from active portfolio. View replacement parts via Part Number Search. \n?Typical W–CDMA Performance for 2140 MHz, 28 Volts\n4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:\nOutput Power = 11.5 Watts\n\tEfficiency = 16%\n\tGain = 12.2 dB\n\tACPR = –45 dBc\n\n?Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power\n\n?Internally Matched for Ease o;

恩XP

RF Power Field Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W–CDMA Performance for 214

文件：556.53 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

文件：391.9 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

文件：391.9 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

文件：391.9 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W–CDMA Performance for 214

文件：556.53 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉