RF Power Field Effect Transistor

文件：333.54 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor

文件：520.03 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor

文件：520.03 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor

文件：333.54 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor

文件：333.54 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

2110-2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET

Overview MRF21180R6 removed from active portfolio. View replacement parts via Part Number Search. \n?Typical 2-Carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1700 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, \nEach Carrie;

恩XP

2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET

Overview MRF21180S removed from active portfolio. \n?Typical 2-carrier W–CDMA Performance for VDD = 28 Volts,\nIDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,\nChannel Bandwidth = 3.84 MHz, Adjacent Channels Measured over\n3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products\nMeasured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,\nEach ;

恩XP