RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. ? Typical 2- Carrier W- CDMA Performance: VDD= 28

文件：380.01 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. ? Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

文件：550.96 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETsDesigned for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W- CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications.\n? Typical W- CDMA Performance: 2140 MHz, 28 Volts\n5 MHz Offset @ 4.096 MHz

恩XP

RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. ? Typical 2- Carrier W- CDMA Performance: VDD= 28

文件：380.01 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. ? Typical 2- Carrier W- CDMA Performance: VDD= 28

文件：380.01 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. ? Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

文件：550.96 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. ? Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

文件：550.96 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

2110-2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs

Overview MRF21060LR3, MRF21060LSR3 removed from active portfolio. View replacement parts via Part Number Search. \n?Typical 2–carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 12.5 dB\n\tDrain Efficiency: 15%\n\tACPR @ 5 MHz Offset: –47 dBc in 3.84 MHz Channel Bandwidth;

恩XP

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETsDesigned for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications.\n? Typical W–CDMA Performance: 2140 MHz, 28 Volts\n5 MHz Offset @ 4.096 MHz BW,

恩XP