RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. ? Typical GSM Performanc

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. ? Typical GSM Performanc

文件：351.3 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

Overview MRF18030BLR3, MRF18030BLSR3 removed from active portfolio. View replacement parts via Part Number Search. \n?Typical GSM Performance:\nPower Gain — 14 dB (Typ) @ 30 Watts\n\tEfficiency — 50% (Typ) @ 30 Watts\n\n?Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power\n\n?Internally Matched for Ease of Use\n\n?High Gain, High Efficiency and High Linearity\n\n?Integrated ESD Protection\n\n?De;

恩XP

1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

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1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

文件：490.56 Kbytes 頁數(shù)：13 Pages

ETCList of Unclassifed Manufacturers

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1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

文件：490.56 Kbytes 頁數(shù)：13 Pages

ETCList of Unclassifed Manufacturers

未分類制造商