絲?。?strong>K110；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.52868 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>K110；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.13 Kbytes 頁數(shù)：3 Pages

SY

順燁電子

絲?。?strong>K110；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.86 Kbytes 頁數(shù)：3 Pages

SY

順燁電子

絲?。?strong>K110；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.43 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

絲印：K110A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.3 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.1 mΩ (typ.) (VGS = 10 V

文件：559.59 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲印：K110A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：470.06 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k110e10pl/marking.html">K110E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.3 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.0 mΩ (typ.) (VGS = 10 V

文件：575.49 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k110e65z/marking.html">K110E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：471.6 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲印：K110N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：480.12 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k110z65z/marking.html">K110Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：484.07 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝