絲?。?a target="_blank" title="Marking" href="/k110n65z/marking.html">K110N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

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TOSHIBA

東芝

Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\nPolarity：N-ch\nGeneration：DTMOSⅥ\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Please contact us. Drain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V \nDrain current ID 24 A \nPower Dissipation PD 190 W ;

Toshiba

東芝

N-Channel Enhancement Mode MOSFET

文件：236.47 Kbytes 頁數(shù)：4 Pages

DACO

罡境電子

isc N-Channel MOSFET Transistor

文件：298.55 Kbytes 頁數(shù)：2 Pages

ISC

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N-Channel SuperFET? II FRFET? MOSFET

Description SuperFET? II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

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FAIRCHILD

仙童半導(dǎo)體