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          首頁(yè) >ISPD02N50C3>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          ISPD02N50C3

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;N-Channel MOSFET Transistor

          ? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:335.21 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPD02N50C3

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

          文件:1.07867 Mbytes 頁(yè)數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          SPD02N50C3

          N-Channel MOSFET Transistor

          ? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:335.21 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPD02N50C3

          Cool MOS Power Transistor

          文件:635.61 Kbytes 頁(yè)數(shù):11 Pages

          INFINEON

          英飛凌

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          詢價(jià)
          更多ISPD02N50C3供應(yīng)商 更新時(shí)間2026-1-19 18:21:00
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