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          首頁(yè) >IRFR024>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRFR024R

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:4.50222 Mbytes 頁(yè)數(shù):7 Pages

          KERSEMI

          IRFR024TR

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:4.50222 Mbytes 頁(yè)數(shù):7 Pages

          KERSEMI

          IRFR024TR

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:1.98595 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR024TRL

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:1.98595 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR024TRL

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:4.50222 Mbytes 頁(yè)數(shù):7 Pages

          KERSEMI

          IRFR024TRPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:4.50222 Mbytes 頁(yè)數(shù):7 Pages

          KERSEMI

          IRFR024TRPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:1.98595 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR024_10

          Power MOSFET

          文件:1.16522 Mbytes 頁(yè)數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR024_17

          Power MOSFET

          文件:1.04466 Mbytes 頁(yè)數(shù):11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR024A

          isc N-Channel MOSFET Transistor

          文件:320.88 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          技術(shù)參數(shù)

          • OPN:

            IRFR024NTRLPBF/IRFR024NTRPBF

          • Qualification:

            Non-Automotive

          • Package name:

            DPAK/DPAK

          • VDS max:

            55 V

          • RDS (on) @10V max:

            75 m?/75 m?

          • ID @25°C max:

            17 A/17 A

          • QG typ @10V:

            13.3 nC/13.3 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V/2 V

          • VGS(th) max:

            4 V/4 V

          • VGS(th):

            3 V/3 V

          • Technology:

            IR MOSFET?/IR MOSFET?

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          原廠封裝
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          25+
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          更多IRFR024供應(yīng)商 更新時(shí)間2026-1-19 15:00:00
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